Distortion Compensation of Multi-Mesfet Circuits

نویسندگان

  • D. R. Webster
  • David G. Haigh
  • Anthony E. Parker
چکیده

to reprint or re-publish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each authors copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. ABSTRACT We present an analysis of a 4-FET Transconductor at medium frequencies, using a more realistic GaAs MESFET model, to calculate optimum device widths to minimise 2nd order distortion. Provisional analytical results are compared with SPICE simulations using the Parker Skellem model. A multi-FET Frequency Doubler is similarly analysed to calculate optimum device widths for high fundamental rejection and optimum load for 3rd order distortion nulling. The high frequency d e m o n of the 4-FET Transconductor is discussed. simulated performance of two high frequency distortion compensated Linearised Isolator designs, together with a variation of the Frequency Doubler, show good performance at high frequencies.

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تاریخ انتشار 1994